http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. STT6802 3.3a , 30v , r ds(on) 65 m ? n-channel enhancement mode mosfet elektronische bauelemente 15-aug-2011 rev. a page 1 of 4 6802 top view rohs compliant product a suffix of -c specifies halogen and lead-free description STT6802 utilized advanced processing techniques to achieve the lowest possible on-resistance, extre mely efficient and cost-effectiveness device. the tsop-6 package is universally used for all commercial-indu strial applications. features simple drive requirement smaller outline package surface mount package marking package information package mpq leader size tsop-6 3k 7 inch absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current 3 t a =25c i d 3.3 a t a =70c 2.6 pulsed drain current 1 i dm 10 a power dissipation t a =25c p d 1.14 w linear derating factor 0.01 w / c operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to ambient 3 r ja 110 c / w ref. millimeter ref. millimeter min. max. min. max. a 2.70 3.1 0 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 2 3 4 5 6 date code
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. STT6802 3.3a , 30v , r ds(on) 65 m ? n-channel enhancement mode mosfet elektronische bauelemente 15-aug-2011 rev. a page 2 of 4 electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 30 - - v v gs =0, i d =250ua gate-threshold voltage v gs(th) 1.0 - 2.5 v v ds =v gs , i d =250ua gate-body leakage current i gss - - 100 na v gs = 20v drain-source leakage current i dss - - 1 a v ds =30v, v gs =0 - - 25 v ds =24v, v gs =0, t j =70 c drain-source on-resistance 2 r ds(on) - - 65 m v gs =10v, i d =3a - - 90 v gs =4.5v, i d =2a forward transconductance g fs - 4.0 - s v ds =5v, i d =3.0a dynamic total gate charge 2 q g - 3.1 - nc v ds =25v, v gs =4.5v, i d =3.0a gate-source charge q gs - 1.2 - gate-drain charge q gd - 1.6 - turn-on delay time 2 t d(on) - 3.3 - ns v ds =15v, v gs =10v, r gen =3.3 , r d =15 , i d =1a rise time t r - 2.5 - turn-off delay time t d(off) - 13.2 - fall time t f - 1.7 - input capacitance c iss - 200 - pf v gs =0,v ds =25v,f=1.0mhz output capacitance c oss - 40 - reverse transfer capacitance c rss - 20 - reverse transfer capacitance r g - 2.3 3.0 f=1.0mhz source-drain diode diode forward voltage 2 v sd - - 1.2 v i s =0.9a, v gs =0v reverse recovery time t rr - 14 - ns i s =3.0a, v gs =0v di/dt=100a/ s reverse recovery charge q rr - 7.0 - nc notes: 1. pulse width limited by max. junction temperatur e. 2. pulse test 3. surface mounted on 1 in 2 copper pad of fr4 board, t Q 5sec; 180 /w when mounted on min. copper pad.
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. STT6802 3.3a , 30v , r ds(on) 65 m ? n-channel enhancement mode mosfet elektronische bauelemente 15-aug-2011 rev. a page 3 of 4 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. STT6802 3.3a , 30v , r ds(on) 65 m ? n-channel enhancement mode mosfet elektronische bauelemente 15-aug-2011 rev. a page 4 of 4 characteristic curves
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